Chun-Yan Wu,* Jingwei Kang, Chao Zhang, Kaijun Cao, Yu Lu, Shirong Chen, Chao Xie,* Li Wang, Wenhua Yang, 

Lin-Bao Luo*

Abstract:In this work, we present the assembly of a γ-In₂Se₃/GaAs heterostructure-based photodetectors linear array composed of 1×10 device units. The layered γ-In₂Se₃ films with a well-defined pattern are deposited directly onto the GaAs substrate via radio-frequency magnetron sputtering deposition assisted by a pre-photolithography process. The as-fabricated heterojunction exhibits apparent photovoltaic effect, which affords the device with the function to operate as a self-driven photodetector. The critical photoresponse performance parameters in terms of Ilight/Idark ratio, responsivity, specific detectivity and response speed can reach 1.29×104, 0.25 AW^-1, 7.34×10¹² Jones and 23.6/146.7 µs (rise/fall times), respectively, under 660 nm light irradiation at 0 V. What is more, further device evaluation reveals that the photodetectors array shows good uniformity with minor unit-to-unit variation. The above merits endow the photodetectors array with the ability to monitor a moving optical signal and to record an “E” image produced by a visible illumination. It is believed that the present photodetectors array is very promising for some optoelectronic purposes such as real-time light trajectory tracking and visible light image sensing applications.