实验室动态
恭喜实验室付灿同学获得2021年度...
恭喜实验室张致翔同学获得2019年...
恭喜实验室梁毅同学获得2021年度...
恭喜实验室张超同学获得2021年度...
恭喜实验室蒋静静同学获得2020年...
恭喜实验室赵兴远同学获得2019年...
恭喜实验室陆星彤同学获得2019年...
恭喜实验室康经纬同学获得2019年...
付灿同学关于一种结构简单且具有...
陈华瀚同学关于准二维钙钛矿抗反...
曾斌同学关于钙钛矿光栅结构诱导...
曹开俊同学关于通过厚度调控InSe...
童小伟同学的关于PtTe2材料用于...
康经纬同学关于γ-In2Se3/GaAs ...
张秀星同学关于高开关比、空气稳...
陆星彤同学关于氧化镓薄膜的图案...
罗和昊同学关于高灵敏且响应波段...
朱慧男同学关于GaSe微米带的可控...
李振同学关于自驱动、免滤波片、...
蒋静静同学关于甲基胺铅碘单晶p-...
罗林保老师与我校光电技术研究院...
陆星彤同学的关于无催化剂生长氧...
张致翔同学的关于基于无机无铅宽...
赵兴远同学关于PdSe2/金字塔硅近...
康经纬同学关于层状γ-硒化铟纳...
李晶晶同学的关于高性能多层硒化...
彭伟同学的关于不对称接触导致的...
梁林同学的宽光谱钙钛矿光电探测...
童小伟同学关于硅/CsBi3I10异质...
吴国安同学的钙钛矿/有机半导体...
徐继宇同学的关于氟化石墨烯/硅...
王振宇同学关于石墨烯辅助定向生...
王迪同学关于二硒化钯-锗纳米锥...
罗林保老师与香港理工大学曾志源...
陆星彤同学的关于超宽禁带半导体...
张致翔同学关于钙钛矿光电耦合器...
王莉老师的双表面等离子体增强的...
林艺同学的关于无ITO钙钛矿太阳...
工业与装备技术研究院刘家琴老师...
梁凤霞老师的多孔阳极氧化法制备...
梁凤霞老师的关于石墨烯-氧化锌...
罗林保老师与意大利理工学院黄建...
张致翔同学的关于多层PtSe2-钙钛...
罗林保老师与香港理工大学曾志源...
谢超老师的关于基于石墨烯-半导...
王九镇同学的关于宽光谱、快速、...
罗林保老师与安师大合作的关于高...
梁凤霞老师关于一维半导体纳米结...
汪丹丹同学关于铜纳米颗粒表面等...
潘志强同学的关于核-壳硅纳米线...
 
 
 
 
孔维玉同学的关于石墨烯-β-氧化镓异质结高灵敏深紫外探测器的研究的论文被Advanced Materials接受发表


                      Caiwang Ge, Linbao Luo*, Yifei Tao, Lie Zhu, Kun Zheng, Wei Wang, Yongxuan Sun,Fei Shen, and Zhongyi Guo*
Abstract: We have designed and investigated a three-band refractive index (RI) sensor in the range of 550~900nm based on the metal nanoslit array with gain-assisted materials. The underlying mechanism of the three-band and enhanced characteristics of the metal nanoslit array with gain-assisted materials, have also been investigated theoretically and numerically. Three resonant peaks in transmission spectra are deemed to be different plasmonic resonant modes in the metal nanoslit array, which will lead to different responses for the plasmonic sensor. By embedding the structure into the CYTOP with proper gain-assisted materials, the sensing performances can be greatly enhanced due to a dramatic amplification of the extraordinary optical transmission (EOT) resonance by the gain medium. When the gain values reach to their corresponding thresholds for the three plasmonic modes, the ultrahigh sensitivities in three bands can be obtained, and especially for the second resonant wavelength (λ2), the FOM=128.1 and FOM*= 39100 can be attained at the gain threshold of k=0.011. Due to these unique features, the designing scheme of the proposed gain-assisted nanoslit sensor could provide a powerful approach to optimize the performance of EOT-based sensors and offer an excellent platform for biological sensing.

Nanophotonics (Impact factor: 5.7)


 
 
合肥工业大学先进半导体器件与光电集成实验室
Copyright © 2010 All rights reserved.