Yifeng Zou, Cai-Wang Ge, Yi-Feng Zou, Kun Zheng, Dan-Dan Wang, Teng-Fei Zhang, Lin-Bao Luo*
Abstract:In this work, we present a plasmonic near infrared light (NIR) photodetector for the detection of 980 nm illumination. The plasmonic photodetector was fabricated by modifying single layer graphene(SLG) /InPSchottky junction diode with SiO2 encapsulated gold nanorods(SiO2@AuNR), which can confinethe incident NIR light by inducing obvious localized surface plasmon resonance (LSPR), according to theoretical simulation based on finite element method (FEM). Device performance study shows that after decoration with plasmonic SiO2@AuNR, the device performance in terms of photocurrent and responsivity is considerably enhanced. In addition, the device exhibited a very fast response rate which is able to monitor a switching optical signals with frequency as high as 1MHz, suggesting the potential application for sensing high-frequency optical signal. This study manifests that the present plasmonic NIR photodetector will have great potential in future optoelectronic devices application.