Chun-Yan Wu*, Xin-Gang Wang, Zhi-Qiang Pan, You-Yi Wang, Yong-Qiang Yu, Li Wang, Lin-Bao Luo*
Abstract:Tetragonal KCu7S4 nanobelts (NBs) with width of 200-600 nm and length up to hundreds of micrometers were facially synthesized via a solution-based method.Electrical analysisreveals that the as-fabricated NB exhibitstypical p-type semiconducting characteristics with an exceptional high carrier mobility of ～870 cm2 V-1 s-1, which may be attributed to the quasi-1D conduction path along the c axis in the structure of KCu7S4. Further studyof a device based on Cu/KCu7S4NB/Au Schottky junction shows a stable memory behavior with a set voltage of about 0.6 V, a current ON/OFF ratio of about 104, and a retention time > 104 s. Such resistive switchingcharacteristics, according to our analysis are due to the interfacial oxide layers that can efficiently trapping the electrons by the oxygen vacancies.This study will offer opportunities for the development of high-performance memory device with new geometry.