Li Wang,* Xu Ma, Ran Chen, Yong-Qiang Yu,* and Lin-Bao Luo*
Abstract:We report on a semiconductor nanostructures/metal Schottky junction for optoelectronic device application. The n-type ZnS nanoribbons (NRs) with an electron mobility of 64.9 and electron concentration of 5.7×10¹⁷cm^-3 were synthesized by using Cl elements as dopant via a thermal co-evaporation method. Electrical analysis reveals that the Schottky barrier diodes (SBD) based on the ZnS:Cl NRs/Au junctions exhibited typical rectifying behavior (rectification ratio >10⁷) with Schottky barrier height of 0.64 eV and a small ideality factor of ~1.29 at 320 K. Interestingly, n-ZnS:Cl NR/Au nano-SBD device exhibited pronounced negative photoresponse at forward bias, but positive photoresponse at reverse bias under 365 nm UV light irradiation. Finally, the detailed reason for this phenomenon was explained by the energy band diagram.