| p-type ZnTe:Ga nanowires: controlled doping and optoelectronic devices application |
Lin-Bao Luo, * Shun-Hang Zhang, Rui Lu, Wei Sun, Qun-Ling Fang, Chun-Yan Wu, * Ji-Gang Hu, Li Wang, *
Abstract:Although significant progress has been achieved in synthesis and doping of ZnTe nanostructures, it remains a major challenge to rationally tune their transport properties for nanodevices applications. In this work, p-type ZnTe nanowires (NWs) with tunable conductivity were synthesized by employing Ga/Ga2O3 as dopant via a simple thermal evaporation method. Electrical measurements of back-gate metal�oxide field-effect-transistors based on single NW revealed that when the Ga content in the ZnTe NWs increases from 1.3 to 5.1 and 8.7%, the hole mobility and hole concentration will increase from 0.0069, 0.33 to 0.46 cm2 V-1 s-1, respectively. It was also found that photodetector composed of ZnTe: Ga NW/graphene Schottky diode exhibited high sensitivity to visible light illumination with on/off ratio as high as 102 at reverse bias, with good reproducibility. The responsivity and detectivity were estimated to be 4.17×103 A/W and 3.19×1013 cmHz1/2W-1, higher than other ZnTe nanostructures based photodetectors. It is expected that the ZnTe: Ga NWs with controlled p-type conductivity are promising building blocks for fabricating high performance nano-optoelectronic devices in the future.
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