| Core/shell CdS:Ga/ZnTe:Sb p-n nano-heterojunction: Fabrication and optoelectronic characteristics |
Li Wang,* Hong-Wei Song, Zhen-Xing Liu, Xu Ma, Ran Chen, Yong-Qiang Yu, Chun-Yan Wu, Ji-Gang Hu, Yan Zhang, Qiang Li, and Lin-Bao Luo*
Abstract:In this study, we reported on the construction of p-n junction based on crystalline Ga-doped CdS/polycrystalline ZnTe nanostructure (NS) for optoelectronic device application. The coaxial nano-heterojunction was fabricated by a two-step growth method. it is found that absorption edge of CdS:Ga/ZnTe:Sb core-shell NSs red shifted to about 580 nm, compared with CdS nanowires (520 nm). The as-fabricated core-shell p-n junction exhibited obvious rectification characteristics with low turn-on voltage of ~0.25 V. What is more, it showed stable and repeatable photoresponse to 638 nm light illumination, with a responsivity and detectivity of 1.55×103 AW-1and 8.7×1013 cmHz1/2W-1, respectively, much higher than other photodetectors with similar device configuration. The generality of this study suggests that the present coaxial CdS:Ga/ZnTe:Sb core-shell nano-heterojunction will have great potential applications in future nano-optoelectronic devices.
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