| Graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity |
Lin-Bao Luo,* Han Hu, Xian-He Wang, Rui Lu, Yi-Feng Zou, Yong-Qiang Yu,* Feng-Xia Liang*
Abstract:We report a simple AlOx passivation approach to optimize bilayer graphene/gallium arsenide (BLG/GaAs) Schottky junction based near infrared photodetector (NIRPD). The as-fabricated NIRPD was highly sensitive to NIR illumination at zero bias voltage, with detectivity of 2.88 × 1011, much higher than that without passivation (7.3×109 cmHz1/2W-1). The corresponding responsivity is 5 mAW-1. Additionally, the surface passivation can substantially increase the response speed from microsecond (rise/fall time τr/τf : 32/48 μs) to nanosecond (τr/τf : 320/380 ns). It is expected that such self-driven NIRPD with fast response speed and high detectivity will have great potential as future optoelectronic devices.
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