| One dimensional CuO nanowire:synthesis,electrical and optoelectronic devices application |
Lin-Bao Luo, Xian-He Wang, Chao Xie, Zhong-Jun Li, Rui Lu, Xiao-Bao Yang*, Jian Lu*
Abstract:In this work, we presented a surface mechanical attrition treatment (SMAT) assisted approach to the synthesis of one dimensional copper oxide nanowires (CuO NWs) for nano-devices applications. The as-prepared CuO NWs have diameter and the length of 50~200 nm and 5~20 μm, respectively, with a preferential growth orientation along [10] direction. Interestingly, nano-field-effect-transistor (nano-FET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1s-1 and hole concentration of 1.34×108 cm-3, respectively. According to first-principles calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What's more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain and detectivity are estimated to be 2.0×102 A・W-1, 3.95×102, 6.38×1011cm・Hz1/2W-1, respectively, which are better than the devices composed of other materials. Further study showed that nano photodetectors assembled on flexible PET substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high performance optoelectronic devices.
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