| Near infrared light photovoltaic detector based on GaAs nanocones array/monolayer graphene Schottky junction |
Lin-Bao Luo*, Jing-Jing Chen, Ming-Zheng Wang, Han Hu, Chun-Yan Wu, Qiang Li, Li Wang, Jian-An Huang,* Feng-Xia Liang*
Abstract:Near infrared light photodiodes have been attracting increasing extensive interest due to the wide application in various fields. In this study, we report on the fabrication of a new photovoltaic n-type GaAs nanocones (GaAsNCs) array/monolayer graphene (MLG) Schottky junction for near infrared light (NIR) detection. The NIR photodetector (NIRPD) shows obvious rectifying behavior with a turn-on voltage of 0.6 V. Further device analysis reveals that the photovoltaic NIRPDs were highly sensitive to 850 nm light illumination with fast response speed and good spectral selectivity at zero bias voltage. It is also revealed that the NIRPD is capable of monitoring high switching frequency optical signal (~2000 Hz) with a high relative balance. Theoretical simulation based on Finite Difference Time Domain (FDTD) finds that the high device performance is partially associated with the optical property which can trap most incident photons in an efficient way. It is expected that such a self-driven NIRPD will have great potential application in future optoelectronic devices.
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