| p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties |
Ming-Zheng Wang, Wei-Jie Xie, Han Hu, Yong-Qiang Yu, Chun-Yan Wu, Li Wang, Lin-Bao Luo*
Abstract:Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NW revealed typical p-type conduction behavior, with a hole mobility of 3.41 cm2V-1s-1 and a hole concentration of 1.67×1017 cm-3, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity and photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.
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