| High performance nonvolatile memory devices based on Cu2-xSe nanowirese |
Chun-Yan Wu*， Yi-Liang Wu, Wen-Jian Wang, Dun Mao, Yong-Qiang Yu, Li Wang, Jun Xu, Ji-Gang Hu and Lin-Bao Luo*
Abstract:We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.
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| Applied Physics Letters |
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