| p-Type Beta-Silver Vanadate Nanoribbons for Nano-Electronic Devices with Tunable Electrical Properties |
Mei Feng, Lin-Bao Luo, Biao Nie, Shu-Hong Yu
Abstract：β-AgVO3, as a stable phase and a typical silver vanadium oxide, has performed special ionic and electrical properties. We report the construction of nano-electronic devices based on ultralong β-AgVO3nanoribbons (NRs), including nano-field-effect transistor (nano-FET) and nano-Schottky barrier diode (nano-SBD). Owing to the specific channel structure and ion conductivity, the nano-FET exhibited typical p-type semiconductor characteristics and the nano-SBD with Al contacts performed a prominent rectifying behavior with an on/off ratio of up to 103. Besides, tunable electrical transport properties can be achieved by tailoring the material properties, and it has been demonstrated that the bridging NR numbers and diameters have a positive effect on electrical transport properties, while a complex variation trend was observed in the case of surface modification by photo-irradiation. Electron spin resonance (ESR) spectrum further illuminated that the induced vacancies have played an important role on the electrical transport properties of β-AgVO3 nanoribbons. Easy access to the ultralong β-AgVO3 NRs allows it possible as a promising candidate for potential applications in nano-electronic devices.
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