| Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application |
Biao Nie, Lin-Bao Luo*, Jing-Jing Chen, Ji-Gang Hu, Chun-Yan Wu, Li Wang, Yong-Qiang Yu, Zhi-Feng Zhu, Jian-Sheng Jie
Abstract:p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline and grow along [001] direction. The Sb presence in ZnSe NWs was confirmed by XPS spectrum. Electrical measurement of single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor (MOSFET) reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over 8 orders of magnitude from 6.36×10-7 Scm-1 for the undoped sample, to ~ 37.33 Scm-1 for the heavily doped sample. Crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with rectification ratio as high as 103 at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet (UV) light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices. |
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