p-CdTenanoribbon/n-silicon nanowires array heterojunctions:
photovoltaic devices and zero-power photodetectors |
Chao Xie, Lin-BaoLuo*,Long-HuiZeng, Long Zhu, Jing-Jing Chen, Biao Nie, Ji-Gang Hu, Qiang Li, Chun-Yan Wu, Li Wang, Jian-Sheng Jie*
Abstract: Nano-heterojunction composed of single Sb doped p-type CdTenanoribbon (CdTeNR) and n-type silicon nanowires (SiNWs) array was successfully fabricated. The p-nheterojunction exhibited excellent rectifying behavior with a rectification ratio of 105 at ±2 V in dark. Due to the matched band-gap of CdTeNR with SiNWs, as well as the efficient light absorption of the SiNWs array,pronounced photovoltaic characteristics with energyconversion efficiency up to 2.1% under AM 1.5Gwas achieved. What is more, the heterojunction device could serve as high-performance zero-power photodetectoroperated at visible to near infrared (NIR) range with good stability, high sensitivity, and fast response speed. It is expected that the p-CdTeNR/n-SiNWs array heterojunctions will find important applications in future nano- optoelectronic devices.
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