Self-powered and fast-speed photodetector based on
CdS:Ga nanoribbon/Au Schottky diodes |
Di Wu,Yang Jiang*, Yu-Gang Zhang, Yong-Qiang Yu, Zhi-Feng Zhu, Xin-ZhengLan, Chun-Yan Wu, Li Wang, Lin-BaoLuo*
Abstract: Self-powered photodetectors based on CdS:Gananoribbon (NR)/AuSchottkybarrier diodes (SBDs)were fabricated. The as-fabricated SBD exhibitsan excellent rectification characteristic with a rectification ratio up to 106 within ±1Vin the dark, and a distinctive photovoltaic (PV)behavior under light illumination. Photoconductive analysis reveals that the SBDs were highlysensitiveto light illumination with very good stability, reproducibility and fast response speed at zero bias voltage. The corresponding rise/fall time of 95/290μsrepresents the bestvalue obtained for the CdS based nano-photodetectors. It is expected thatsuch a self-powered high performance SBD photodetectors will have great potential application optoelectronic devices in the future.
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