Synthesis of Sb-Doped p-Type CdTe Nanowires and Their Application as
High-Performance Nano-Schottky Barrier Diodes |
Long Zhu, Jiansheng Jie*, Di Wu, Linbao Luo, Chunyan Wu, Zhifeng Zhu, Yongqiang Yu, Li Wang
Abstract: p-type CdTe nanowires (NWs) were successfully synthesized by employing Sb as the dopant via a simple thermal evaporation method. CdTe:Sb NWs had single crystal zinc blende structure with [211] growth orientation. Electrical measurements on the single NW revealed a substantial enhancement on the NW conductivity after doping, which could be further tuned in a wide range of 4 orders of magnitude by adjusting the doping level. Nano-Schottky barrier diodes (nanoSBDs) based on Al/CdTe:Sb NW junctions showed excellent diode characteristics with low turn on voltage of ~+1 V, high rectification ratio of >107, small ideality factor of ~1.67, and large breakdown voltage of -17.5 V. By replacing the hard SiO2/Si substrates with PET substrates, flexible nanoSBDs were constructed, which kept the high device performance while also showed the good stability under strains. It is expected that the CdTe NWs with controlled transport properties will have important applications in the future nanoelectronics.
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