Device structure-dependent field-effect and
photoresponse performances of p-type ZnTe:Sb nanoribbons |
Di Wu, Yang Jiang*, Yugang Zhang, Junwei Li, Yongqiang Yu, Yuping Zhang, Zhifeng Zhu, Li Wang, Chunyan Wu, Linbao Luo and Jiansheng Jie*
Abstract: Sb-doped ZnTe NRs with enhanced p-type conductivity were successfully synthesized by a simple thermal co-evaporation method. Nanodevices, including nano-field-effect transistors (FETs) and nano-photodetectors (nanoPDs), were constructed based on the ZnTe:Sb NRs and their structure dependent device performances were systemically investigated. It is found that the transport properties of the ZnTe nanostructures as well as the device structures play a critical role in determining the device performances. In contrast to the nano-metal-oxide-semiconductor FETs (nanoMOSFETs) with back-gate structure, the top-gate nano-metal-insulator-semiconductor FETs (nanoMISFETs) show much enhanced performance in all aspects. On the other hand, owing to the appropriate p-type doping, nano-photodetectors (nanoPDs) based on the ZnTe:Sb NRs exhibit excellent device performances, such as high responsivity and photoconductive gain, fast response speed, large detectivity and so on. Moreover, the response time could be effectively shortened by using the nano-heterojunctions photodetectors (nanoHPDs). It is expected that experiences gained from this work could be readily extended to the nanodevices based on other nanostructures.
|
|
|
