| Surface charge transfer doping of germanium nanowires by MoO3 deposition |
Lin-bao Luo, Tsz-wai Ng, Hao Tang, Feng-xia Liang, Yu-cheng Dong, Jian-sheng Jie, Chun-Yan Wu, Li Wang, Zhi-Feng Zhu, Yong-Qiang Yu, Qiang Li
Abstract: We report on the surface transfer p-type doping of germanium nanowires (GeNWs) via MoO3 thin film deposition. The GeNWs studied were prepared by a conventional thermal evaporation approach. Electrical property analysis shows that the conductance, hole mobility and concentration were all prominently enhanced after MoO3 thin film coating. Such a remarkable surface doping effect can be attributed to the surface charge transfer at the GeNWs/MoO3 interface, which is verified by in situ XPS analysis of GeNWs as a function of increasing MoO3 coverage. Further hole mobility and concentration evolution study of MoO3/GeNWs reveals that the GeNWs embedded in the MoO3 layer can retain its electrical property after storage in air for 3 months. The generality of the above results suggests that the charge transfer doping via surface deposition has great potential in GeNW-based nanoelectronic device and may also be applicable to the modulation of other semiconductor nanostructures.
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