Aluminum-doped n-type ZnS nanowires as high-performance UV and
humidity sensors |
Peng Jiang, Jiansheng Jie*, Yongqiang Yu, Zhi Wang, Chao Xie, Xiwei Zhang, Chunyan Wu, Li Wang, Zhifeng Zhu, Linbao Luo
Abstract: Controlling the electrical transport properties of II-VI nanostructures is vital to their practical applications. Here, we report the synthesis of n-type ZnS nanowires (NWs) by using Aluminum (Al) as dopant via a simple thermal co-evaporation method. The conductivities of the ZnS:Al NWs were greatly enhanced upon Al doping and could be further tuned in a wide range of 3 orders of magnitude by 10 adjusting the doping level. Field-effect transistors (FETs) fabricated from individual ZnS:Al NWs revealed an electron concentration up to 1.3×1018 cm-3 in the NWs. Significantly, the doped NWs showed great potential as visible-blind UV sensors with an extremely high responsivity of 4.7×106 AW-1, giving rise to a large gain-bandwidth (GB) of ~0.1 GHz. The high sensitivity of the ZnS:Al NWs to humidity was also investigated; the devices displayed a resistance variation about 2 orders of magnitude in the 15 relative humidity (RH) range of 50-90%. Our results demonstrate that the n-type ZnS:Al NWs have important applications in the nanoelectronic and nano-optoelectronic devices.
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