Tuning the electrical transport properties of n-type CdS nanowires
via Ga dopingand its nano-optoelectronic applications |
Jiajun Cai, Jiansheng Jie*, Peng Jiang, Di Wu, Chao Xie, Chunyan Wu, Zhi Wang, Yongqiang Yu,, Li Wang, Xiwei Zhang, Qiang Penga and Yang Jiang
Abstract Gallium-doped n-type CdS nanowires (NWs) were successfully synthesized via a thermal evaporation method. The conductivities of the CdS NWs were dramatically improved by near nine orders of magnitude after Ga doping and it could be further tuned in a wide range by adjusting the doping level. High-performance metal-insulator-semiconductor field-effect transistors (MISFETs) were constructed based on the single CdS:Ga NW with high-κ Si3N4 dielectric and top-gate geometry. In contrast to the back-gate FETs, the MISFETs revealed a substantial improvement on device performances. Nano-light emitting diodes (nanoLEDs) were fabricated from the CdS:Ga NWs by using a n-NW/p+ -Si substrate hybrid device structure. The nanoLEDs showed bright yellow emission at low forward bias. It is expected that the Ga-doped CdS NWs with control electrical transport properties will have important applications in nano-optoelectronic devices.
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