Chao Xie, Xingtong Lu, Yi Liang, Huahan Chen, Li Wang, Chunyan Wu, Di Wu, Wenhua Yang, and Lin-Bao Luo* 

Abstract:Solar-blind deep-ultraviolet (DUV) photodetectors based on Ga₂O₃ have attracted great attention due to their potential applications for many military and civil purposes. However, the development of device integration for optoelectronic system applications remains a huge challenge. Herein, we report a facile method for patterned-growth of high-quality β-Ga₂O₃ thin films, which are assembled into a photodetectors array comprising 8×8 device units. A representative detector exhibits outstanding photoresponse performance, in terms of an ultra-low dark current of ~0.62 pA, a large Ilight/Idark ratio exceeding 104, a high responsivity of ~0.72 AW^-1 and a large specific detectivity of ~1.88×10¹³ Jones, upon 265 nm DUV illumination. What is more, the DUV/visible (250/400 nm) rejection ratio is as high as 103 with a sharp response cut-off wavelength at ~280 nm. Further optoelectronic analysis reveals that the photodetectors array has good uniformity and repeatability, endowing it the capability to serve as a reliable DUV light image sensor with a decent spatial resolution. These results suggest that the proposed technique offers an effective avenue for patterned growth of β-Ga₂O₃ thin films for multifunctional DUV optoelectronic applications.