Lin-Bao Luo,* Xiu-Xing Zhang, Chen Li, Jia-Xiang Li, Xing-Yuan Zhao, Zhi-Xiang Zhang, Hong-Yun Chen, Di Wu, Feng-Xia Liang*

Abstract:In this study, we have developed a high-sensitivity, near-infrared photodetector (NIRPD) based on PdSe₂/GaAs heterojunction, which was made by transferring a multilayered PdSe₂ film onto a planar GaAs. The as-fabricated PdSe₂/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination, indicating that the NIRPD can be used as a self-driven device without external power supply. Further device analysis showed that the hybrid heterojunction exhibited a high Ilight/Idark ratio of 1.16×10⁵ measured at 808 nm under zero bias voltage. The responsivity and specific detectivity of photodetector were estimated to be 171.34 mAW⁻¹ and 2.36×10¹¹Jones, respectively. Moreover, the device showed excellent stability and reliable repeatability. After 2 months, the photoelectric characteristics of the NIRPD hardly degrade in air, attributable to the good stability of the PdSe₂. Finally, the PdSe₂/GaAs-based heterojunction device can also function as a NIR light sensor, which can easily record the table lamp image generated by 808 nm illumination, these results signify that the present PdSe₂/GaAs heterojunction may be potential useful in future infrared photoelectric systems.